publication date : july 2012 1 < igbt modules > CM450DY-24S high power switching use insulated type collector current i c .............?.......................? 410 a * collector-emitter voltage v ces ......................? 1200 v maximum junction temperature t jmax .............. 175 c flat base type copper base plate rohs directive compliance ul recognized under ul1557, file e323585 dual (half-bridge) *. dc current rating is limited by power terminals. application ac motor control, motion/servo control, power supply, etc. outline drawing & internal connection dimension in mm internal connection tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 g1 e1 (es1) g2 di1 di2 tr1 tr2 c1 c2e1 e2 e2 (es2)
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 2 absolute maximum ratings (t j =25 c, unless otherwise specified) symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1200 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =125 c (note.2, 4) 410 * i crm collector current pulse, repetitive (note.3) 900 a p tot total power dissipation t c =25 c (note.2, 4) 3330 w i e (note.1) t c =25 c (note.2, 4) 410 * i erm (note.1) emitter current pulse, repetitive (note.3) 900 a v isol isolation voltage terminals to base plate, rms, f=60 hz, ac 1 min 2500 v t jmax maximum junction temperature - 175 t cmax maximum case temperature (note.4) 125 c t jopr operating junction temperature - -40 ~ +150 t stg storage temperature - -40 ~ +125 c electrical characteristics (t j =25 c, unless otherwise specified) limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1.0 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 0.5 a v ge(th) gate-emitter threshold voltage i c =45 ma, v ce =10 v 5.4 6.0 6.6 v i c =450 a (note.5) , t j =25 c - 1.80 2.25 v ge =15 v, terminal, t j =125 c - 2.05 - refer to figure of test circuit t j =150 c - 2.10 - v i c =450 a (note.5) , t j =25 c - 1.70 2.15 v ge =15 v, t j =125 c - 1.90 - v cesat collector-emitter saturation voltage chip t j =150 c - 1.95 - v c ies input capacitance - - 45 c oes output capacitance - - 9.0 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 0.75 nf q g gate charge v cc =600 v, i c =450 a, v ge =15 v - 1050 - nc t d(on) turn-on delay time - - 800 t r rise time v cc =600 v, i c =450 a, v ge =15 v, - - 200 t d(off) turn-off delay time - - 600 t f fall time r g =0 ? , inductive load - - 300 ns i e =450 a (note.5) , t j =25 c - 1.85 2.30 g-e short-circuited, terminal, t j =125 c - 1.85 - refer to figure of test circuit t j =150 c - 1.85 - v i e =450 a (note.5) , t j =25 c - 1.70 2.15 g-e short-circuited, t j =125 c - 1.70 - v ec (note.1) emitter-collector voltage chip t j =150 c - 1.70 - v t rr (note.1) reverse recovery time v cc =600 v, i e =450 a, v ge =15 v, - - 300 ns q rr (note.1) reverse recovery charge r g =0 ? , inductive load - 24 - c e on turn-on switching energy per pulse v cc =600 v, i c =i e =450 a, - 54.9 - e off turn-off switching energy per pulse v ge =15 v, r g =0 ? , - 48 - mj e rr (note.1) reverse recovery energy per pulse t j =150 c, inductive load - 32.4 - mj r cc'+ee' internal lead resistance main terminals -chip, per switch, t c =25 c - - 0.7 m ? r g internal gate resistance per switch - 4.3 - ?
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 3 thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per igbt - - 45 k/kw r th(j-c)d thermal resistance (note.4) junction to case, per fwdi - - 68 k/kw case to heat sink, per 1/2 module, r th(c-s) contact thermal resistance (note.4) thermal grease applied (note.6) - 18 - k/kw mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 6 screw 3.5 4.0 4.5 nm m s mounting torque mounting to heat sink m 6 screw 3.5 4.0 4.5 nm m weight - - 580 - g e c flatness of base plate on the centerline x, y (note.7) -100 - +100 m note1. represent ratings and characteristics of the anti- parallel, emitter-collector free wheeling diode (fwdi). 2. junction temperature (t j ) should not increase beyond t jmax rating. 3. pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. 4. case temperature (t c ) and heat sink temperature (t s ) are defined on the each surface (mounti ng side) of base plate and heat sink just under the chips. refer to figure of chip location. the heat sink thermal resistance should measure just under the chips. 5. pulse width and repetition rate should be su ch as to cause negligible temperature rise. 6. typical value is measured by us ing thermally conductive grease of =0.9 w/(mk). 7. base plate (mounting side) flatness measurement poi nts (x, y) are as follows of the following figure. y x +:convex -:concave 3 mm +:convex -:concave mounting side mounting side mounting side *. dc current rating is limited by power terminals. recommended operating conditions limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across c1-e2 - 600 850 v v geon gate (-emitter drive) voltage applied across g1-es1/g2-es2 13.5 15.0 16.5 v r g external gate resistance per switch 0 - 8 ?
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 4 chip location (top view) dimension in mm, tolerance: 1 mm tr1/tr2: igbt, di1/di2: fwdi test circuit i c c2 e1 e2 es2 g2 es1 g1 v short- circuited c1 v ge =15 v i c c2e1 e2 es2 g2 es 1 g1 short- circuited c1 v ge =15 v v i e c2e1 e2 es2 g2 es1 g1 v short- circuited c1 short- circuited i e c2e1 e2 es2 g2 es 1 g1 short- circuited c1 v short- circuited tr1 tr2 di1 di2 v cesat test circuit v ec test circuit
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 5 test circuit and waveforms t t f t r t d(on) i c 10% 90 % 90 % v ge v cc r g -v ge +v ge -v ge load 0 v 0 a + 0 v ce v ge 0 v t d(off) t i e i c c1 e2 c2e1 g1 es1 g2 es2 i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.02i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery energy test waveforms (integral time instruction drawing)
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 6 performance curves output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c (chip) v ge =15 v (chip) collector current i c (a) 0 100 200 300 400 500 600 700 800 900 0246810 collector-emitter saturation voltage v cesat (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 600 700 800 900 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c (chip) g-e short-circuited (chip) collector-emitter saturation voltage v cesat (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =125 c t j =25 c t j =125 c t j =25 c t j =150 c t j =150 c i c =900 a i c =450 a i c =180 a v ge =20 v 12 v 11 v 10 v 9 v 13.5 v 15 v
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 7 performance curves half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c =450 a, v ge =15 v, inductive load --------------- : t j =150 c, - - - - -: t j =125 c switching time (ns) 10 100 1000 10 100 1000 switching time t d(on) , t r (ns) 10 100 1000 0.1 1 10 100 100 1000 10000 switching time t d(off) , t f (ns) collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =0 ? , inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c /i e =450 a, v ge =15 v, inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c switching energy e on (mj) reverse recovery energy (mj) 1 10 100 10 100 1000 10 100 1000 switching energy e off (mj) switching energy (mj) reverse recovery energy (mj) 1 10 100 1000 0.1 1 10 100 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) t d(on) t d(off) t f t d(on) t r t f t d(off) e off e on e rr e on e off e rr t r
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 8 performance curves capacitance characteristics (typical) free wheeling diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =600 v, v ge =15 v, r g =0 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c capacitance (nf) 0.1 1 10 100 0.1 1 10 100 i rr (a) 10 100 1000 10 100 1000 100 1000 10000 t rr (ns) collector-emitter voltage v ce (v) emitter current i e (a) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) v cc = 600 v, i c = 450 a, t j =25 c single pulse, t c =25c r th(j-c)q =45 k/kw, r th(j-c)d =68 k/kw gate-emitter voltage v ge (v) 0 5 10 15 20 0 500 1000 1500 normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 gate charge q g (nc) time (s) c ies c oes c res i rr t rr
< igbt modules > CM450DY-24S high power switching use insulated type publication date : july 2012 9 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pur chasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to inform ation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (www.mitsubishielectri c.com/semiconductors/). ?when using any or all of the information contained in these materials, includi ng product data, diagrams, charts, programs, and algorithms, please be sure to ev aluate all information as a total system before making a final decision on the applic ability of the information and products. mitsubishi elec tric corporation assumes no responsibility for any damage, liab ility or other loss resulting from the information containedherein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circumst ances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semi conductor product distributor when considering the use of a product contained herein for any specific purposes, such as app aratus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be impor ted into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulati ons of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubishi semi conductor product distributor for further details on these material s or the products contained therein. ? 2012 mitsubishi electric corporation. all rights reserved.
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